DDR2
內嵌自檢測修復（ECC）DRAM芯片系列產品是西安紫光國芯推出的全球首系列商用的內嵌ECC技術DRAM芯片產品，具有高可靠、大容量、高位寬、高寬溫、多接口等特點，與傳統JEDEC標準DRAM芯片“即插即用”式兼容。針對質量有更高要求的用戶，西安紫光國芯提供超穩健性XR ECC DRAM芯片系列產品。
- Part No.
- Den.
- Org.
- Voltage
- Package
- Dim.(mm)
- Status
- Speed
- Temperature
- Model
SCX18T512160AF
Technical Specifications
- Capacity:512Mb
- Organization:32Mbx16
- Width:8x12.5
- Package:TFBGA84
- Voltage:1.8V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
Datasheet- IBIS
SCX18T512800AF
Technical Specifications
- Capacity:512Mb
- Organization:64Mbx8
- Width:8x10
- Package:TFBGA60
- Voltage:1.8V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCE18T1G800AF
Technical Specifications
- Capacity:1Gb
- Organization:128Mbx8
- Width:8x10
- Package:TFBGA60
- Voltage:1.8V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
SCE18T1G160AF
Technical Specifications
- Capacity:1Gb
- Organization:64Mbx16
- Width:8x12.5
- Package:TFBGA84
- Voltage:1.8V
- RoHS:
Speed-Options
- Data-RateCAS-RCD-RP LatenciesColck RateCycle Time
Download
- Datasheet
- IBIS
Notes
·Temperature Specification
C = Commercial Temperature chip (DDR2, DDR3, DDR4: 0°C ~ +95°C; LPDDR2: 0°C ~ +85°C；SDR, DDR: 0°C ~ +70°C)
I = Industrial Temperature chip (DDR2, DDR3: -40°C ~ +95°C; SDR, DDR, LPDDR2, LPDDR4: -40°C ~ +85°C)
A1 = Automotive grade 1(-40°C ~ +125°C)
A2 = Automotive grade 2(-40°C ~ +105°C)
A25 = Automotive grade 2(-40°C ~ +115°C)
A3 = Automotive grade 3(-40°C ~ +95°C)；LPDDR4(-40°C ~ +85°C)
X = High-Rel grade (-55°C ~ +125°C)
·MP Mass Production
